La2Hf2O7 high-κ gate dielectric grown directly on Si(001) by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1806556
Reference18 articles.
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3. Interface formation and defect structures in epitaxial La2Zr2O7 thin films on (111) Si
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5. Epitaxial silicon grown on CeO[sub 2]/Si(111) structure by molecular beam epitaxy
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