Comparison of sub 1 nm TiN/HfO/sub 2/ with poly-Si/HfO/sub 2/ gate stacks using scaled chemical oxide interface-Reference-Cited by-同舟云学术

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Comparison of sub 1 nm TiN/HfO/sub 2/ with poly-Si/HfO/sub 2/ gate stacks using scaled chemical oxide interface

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Container-title:2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407)
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Author:

Tsai W.,Ragnarsson L.,Chen P.J.,Onsia B.,Carter R.J.,Cartier E.,Young E.,Green M.,Caymax M.,De Gendt S.,Heyns M.

Publisher

Japan Soc. Applied Phys

Link

http://xplorestaging.ieee.org/ielx5/8657/27436/01221066.pdf?arnumber=1221066

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mobility Improvement Study for 8-Å-EOT HfO₂ UTBB-FD-SOI MOSFET Based on the Direct Extraction of the Back-Channel Mobility;IEEE Transactions on Electron Devices;2014-11

2. (Invited) Atomic Layer Deposition of HfO2 Using HF Etched Thermal and RTP SiO2 as Interfacial Layers;ECS Transactions;2014-03-24

3. High-Field Transport Investigation for 25-nm MOSFETs With 0.64-nm EOT: Intrinsic Performance and Parasitic Effects;IEEE Transactions on Electron Devices;2012-07

4. Electrical Characteristics of the HfAlON Gate Dielectric With Interfacial UV-Ozone Oxide;IEEE Electron Device Letters;2008-01

5. Direct Observation of Anomalous Positive Charge and Electron-Trapping Dynamics in High-$k$ Films Using Pulsed-MOS-Capacitor Measurements;IEEE Transactions on Electron Devices;2007-02

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