Implications of a threshold failure time and void nucleation on electromigration of copper interconnects-Reference-Cited by-同舟云学术

Implications of a threshold failure time and void nucleation on electromigration of copper interconnects

Published:2010-05-15 Issue:10 Volume:107 Page:103709
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Filippi R. G.,Wang P.-C.,Brendler A.,Chanda K.,Lloyd J. R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3357161

Reference22 articles.

1. Paradoxical predictions and a minimum failure time in electromigration

2. B. Li, C. Christiansen, J. Gill, R. Filippi, T. Sullivan, and E. Yashchin, 44th Annual Proceedings of Reliability Physics, San Jose, CA (IEEE, New York, 2006), p. 115.

3. Application of gamma distribution in electromigration for submicron interconnects

4. Electromigration failure modes in aluminum metallization for semiconductor devices

5. Black’s law revisited—Nucleation and growth in electromigration failure

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