Effect of annealing temperature on the hole concentration and lattice relaxation of carbon‐doped GaAs and AlxGa1−xAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352017
Reference15 articles.
1. Carbon diffusion in undoped,n‐type, andp‐type GaAs
2. Characterization ofp‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy
3. Intentional ρ-type doping by carbon in metalorganic MBE of GaAs
4. Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy
5. Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy
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2. Temperature dependence of Ohmic contacts of In0.83Ga0.17As photodiodes and its correlation with interface microstructure;Applied Physics A;2015-10-03
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