High resistivity inp‐type InP by deuteron bombardment
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93818
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2. Optical and electrical properties of proton‐bombardedp‐type GaAs
3. Proton-bombardment formation of stripe-geometry heterostructure lasers for 300 K CW operation
4. Optimum proton energy for DH lasers determined by in situ monitoring during bombardment
5. Proton bombardment in InP
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1. Electrical isolation of n- and p-In0.53Ga0.47As epilayers using ion irradiation;Journal of Applied Physics;2003-11-15
2. Electrical isolation of n-type and p-type InP layers by proton bombardment;Journal of Applied Physics;2001-05-15
3. Processing of compound semiconductors;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
4. High-resistance layers inn-type 4H-silicon carbide by hydrogen ion implantation;Applied Physics Letters;1997-02-17
5. A novel processing technique to fabricate planar InGaAsP/InP electroabsorption waveguide modulators;Journal of Electronic Materials;1995-08
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