Auger spectroscopy analysis of palladium silicide films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88199
Reference9 articles.
1. Structure and electrical characteristics of epitaxial palladium silicide contacts on single crystal silicon and diffused P-N diodes
2. The specific contact resistance of Pd2Si contacts on n- and p-Si
3. Metallurgical properties and electrical characteristics of palladium silicide-silicon contacts
4. Chemical Effects in Auger Electron Spectroscopy
5. Auger spectroscopy of silicon
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1. A protective TiN barrier layer for Ti and Pd silicides;Vacuum;1990-01
2. Charge exchange processes in low-energy He+ ion scattering from Si and Pd2Si surfaces;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1990-01
3. Investigation of NiSi and Pd3Si thin films by AES and XPS;Physica Status Solidi (a);1980-12-16
4. Characterization of electronic devices and materials by surface-sensitive analytical techniques;Applications of Surface Science;1980-04
5. Metal-Semiconductor Schottky-Barrier Diodes;Semiconductor Devices and Integrated Electronics;1980
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