A protective TiN barrier layer for Ti and Pd silicides
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference8 articles.
1. Silicides for VLSI Applications;Muraka,1983
2. Refractory metal silicide formation by sputtering a refractory metal on heated Si substrates
3. Structure and electrical characteristics of epitaxial palladium silicide contacts on single crystal silicon and diffused P-N diodes
4. Low temperature oxygen dissolution in titanium
5. Auger spectroscopy analysis of palladium silicide films
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Effects of Implanted Arsenic on Ti-Silicide Formation;Solid State Phenomena;1999-10
2. Frequency noise level of As ion implanted TiNTiSi structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-07
3. Influence of arsenic ion implantation on the formation of Ti-silicides;Vacuum;1995-08
4. Processing of TiN/Ti metallization on silicon by arsenic ion implantation;Surface and Coatings Technology;1990-12
5. Thermal diffusion in AuWTiPd metallization on silicon;Vacuum;1990-01
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