Influence of arsenic ion implantation on the formation of Ti-silicides
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference16 articles.
1. Silicides for VLSI Applications;Murarka,1983
2. Metallurgical aspects of the formation of silicides
3. Electronic Materials Science: For Integrated Circuits in Si and GaAs;Mayer,1990
4. The formation of titanium silicide by arsenic ion beam mixing and rapid thermal annealing
5. Small source/drain metal–oxide-semiconductor field effect transistor using a thermally stable local TiSi2 interconnection
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Effects of Implanted Arsenic on Ti-Silicide Formation;Solid State Phenomena;1999-10
2. High aspect ratio contacts: A review of the current tungsten plug process;Thin Solid Films;1997-07
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