Halftoning band gap of InAs∕InP quantum dots using inductivelycoupled argon plasma-enhanced intermixing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2357563
Reference15 articles.
1. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (Wiley, Chichester, 1999), Chap. 8, p. 277.
2. InAs∕InP(001) quantum dots emitting at 1.55μm grown by low-pressure metalorganic vapor-phase epitaxy
3. Laser-induced InAs/GaAs quantum dot intermixing
4. Selective control of self-organized In[sub 0.5]Ga[sub 0.5]As/GaAs quantum dot properties: Quantum dot intermixing
5. Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of low-temperature InP cap layer thickness on InAs quantum dot photoluminescence;Journal of Crystal Growth;2011-03
2. Inductively Coupled Argon Plasma-Enhanced Quantum-Well Intermixing: Cap Layer Effect and Plasma Process Influence;IEEE Journal of Quantum Electronics;2009-08
3. Effects of grown-in defects on interdiffusion dynamics in InAs∕InP(001) quantum dots subjected to rapid thermal annealing;Journal of Applied Physics;2008-04-15
4. Radiation Effects in Quantum Dot Structures;Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics;2008
5. Determination of diffusion lengths for intermixed quaternary quantum well with polarized edge-emitting photoluminescence;Applied Physics Letters;2007-05-07
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