Determination of diffusion lengths for intermixed quaternary quantum well with polarized edge-emitting photoluminescence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2737125
Reference16 articles.
1. Experimental and Theoretical Analysis of Argon Plasma-Enhanced Quantum-Well Intermixing
2. Effects of interdiffusion on the sub‐band‐edge structure of In0.53Ga0.47As/InP single quantum wells
3. Argon plasma exposure enhanced intermixing in an undoped InGaAsP∕InP quantum-well structure
4. Polarization-insensitive electroabsorptive modulation using interdiffused InGaAs(P)-InP quantum wells
5. Optical properties of an InGaAs-InP interdiffused quantum well
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1. Built-in electric field influence on impurity-free vacancy disordering of InGaAs/InP quantum well structure;Chinese Science Bulletin;2010-05
2. Cap Layer Influence on Impurity-Free Vacancy Disordering of InGaAs/InP Quantum Well Structure;Chinese Physics Letters;2010-01
3. Integrated twin modulator switches through MMI splitting and electroabsorption modulation;Semiconductor Science and Technology;2009-11-13
4. Inductively Coupled Argon Plasma-Enhanced Quantum-Well Intermixing: Cap Layer Effect and Plasma Process Influence;IEEE Journal of Quantum Electronics;2009-08
5. Built-in electric field enhancement/retardation on intermixing;Applied Physics Letters;2007-10-29
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