Built-in electric field enhancement/retardation on intermixing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2805018
Reference26 articles.
1. Photonic integrated circuits fabricated using ion implantation
2. Area selectivity of InGaAsP-InP multiquantum-well intermixing by impurity-free vacancy diffusion
3. Layer selective disordering by photoabsorption-induced thermal diffusion in InGaAs/InP based multiquantum well structures
4. Monolithic integration via a universal damage enhanced quantum-well intermixing technique
5. Enhanced band-gap blueshift due to group V intermixing in InGaAsP multiple quantum well laser structures induced by low temperature grown InP
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Resistive switching in optoelectronic III-V materials based on deep traps;Scientific Reports;2018-06-21
2. Built-in electric field influence on impurity-free vacancy disordering of InGaAs/InP quantum well structure;Chinese Science Bulletin;2010-05
3. Inductively Coupled Argon Plasma-Enhanced Quantum-Well Intermixing: Cap Layer Effect and Plasma Process Influence;IEEE Journal of Quantum Electronics;2009-08
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