Resistive switching in optoelectronic III-V materials based on deep traps

Author:

Schnedler M.,Portz V.,Semmler U.,Moors M.,Waser R.ORCID,Dunin-Borkowski R. E.ORCID,Ebert Ph.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Reference39 articles.

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2. Mittal, S., Vetter, J. S. & Li, D. A Survey Of Architectural Approaches for Managing Embedded DRAM and Non-Volatile On-Chip Caches. IEEE Trans. Parallel Distrib. Syst. 26, 1524, https://doi.org/10.1109/TPDS.2014.2324563 (2015).

3. Wouters, D. J., Waser, R. & Wuttig. Phase-Change and Redox-Based Resistive Switching Memories. M. Proc. IEEE 103, 1274, https://doi.org/10.1109/JPROC.2015.2433311 (2015).

4. Jacob, B., Ng, S. & Wang, D. Memory Systems: Cache, DRAM, Disk. ISBN 978-0123797513, (Elsevier Science, Amsterdam, 2008).

5. Ha, K. et al. Si-based optical I/O for optical memory interface. Proc. SPIE 8267, 82670F-1, https://doi.org/10.1117/12.912794 (2012).

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