Si doping of high-Al-mole fraction AlxGa1−xN alloys with rf plasma-induced molecular-beam-epitaxy-Reference-Cited by-同舟云学术

Si doping of high-Al-mole fraction AlxGa1−xN alloys with rf plasma-induced molecular-beam-epitaxy

Published:2002-12-30 Issue:27 Volume:81 Page:5192-5194
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hwang Jeonghyun,Schaff William J.,Eastman Lester F.,Bradley Shawn T.,Brillson Leonard J.,Look David C.,Wu J.,Walukiewicz Wladek,Furis Madalina,Cartwright Alexander N.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1534395

Reference17 articles.

1. Growth, Doping and Characterization of AlxGa1−xN Thin Film Alloys on 6H-SiC(0001) Substrates

2. Towards the Identification of the Dominant Donor in GaN

3. Stability of deep donor and acceptor centers in GaN, AlN, and BN

4. DX-center formation in wurtzite and zinc-blendeAlxGa1−xN

5. Doping of AlxGa1−xN

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