Stability of deep donor and acceptor centers in GaN, AlN, and BN
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.12995/fulltext
Reference49 articles.
1. Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE
2. GaN, AlN, and InN: A review
3. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
4. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
5. Characteristics of InGaN multi‐quantum‐well‐structure laser diodes
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