Enhancement of p-type doping of ZnSe using a modified (N+Te)δ -doping technique
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126297
Reference16 articles.
1. Blue‐Green Diode Lasers
2. Electrical characterization ofp‐type ZnSe:N and Zn1−xMgxSySe1−y:N thin films
3. Extremely Low-Resistivity High-Electron-Concentration ZnSe Grown by Means of Selective Doping Method
4. Doping of ZnTe by molecular beam epitaxy
5. Carrier concentration enhancement of p-type ZnSe and ZnS by codoping with active nitrogen and tellurium by using a δ-doping technique
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2. Dynamical properties and their strain-dependence of ZnSe(ZnSe:N): Zinc-blende and wurtzite;AIP Advances;2014-06
3. Feasibility of submonolayer ZnTe/ZnCdSe quantum dots as intermediate band solar cell material system;Solar Energy Materials and Solar Cells;2013-10
4. Radiative transitions in stacked type-II ZnMgTe quantum dots embedded in ZnSe;Journal of Applied Physics;2012-09-15
5. Structural properties and spatial ordering in multilayered ZnMgTe/ZnSe type-II quantum dot structures;Journal of Applied Physics;2012-02
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