Radiative transitions in stacked type-II ZnMgTe quantum dots embedded in ZnSe-Reference-Cited by-同舟云学术

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Radiative transitions in stacked type-II ZnMgTe quantum dots embedded in ZnSe

Published:2012-09-15 Issue:6 Volume:112 Page:063521
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Manna U.,Zhang Q.,Dhomkar S.,Salakhutdinov I. F.,Tamargo M. C.,Noyan I. C.,Neumark G. F.,Kuskovsky I. L.

Funder

U.S. Department of Energy

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4754451

Reference51 articles.

1. Type II heterojunctions in the GaInAsSb/GaSb system

2. Applications of Quantum Semiconductor Structures

3. Single-exciton optical gain in semiconductor nanocrystals

4. Optical properties and growth mechanism of multiple type-IIZnTe∕ZnSequantum dots grown by migration-enhanced epitaxy

5. Zn−Se−Temultilayers with submonolayer quantities of Te: Type-II quantum structures and isoelectronic centers

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1. On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001);New Journal of Physics;2021-10-01

2. Advanced material system for the design of an intermediate band solar cell: Type-II CdTe quantum dots in a ZnCdSe matrix;Journal of Applied Physics;2019-12-21

3. Structural, elastic and optoelectronic characteristics of Be Zn1−S, Be Zn1−Se and Be Zn1−Te alloys-a density functional based FP-LAPW study;Computational Condensed Matter;2019-09

4. Density functional calculations of structural, elastic and optoelectronic features of Mg Zn1−S, Mg Zn1−Se and Mg Zn1−Te alloys;Materials Chemistry and Physics;2019-05

5. Determination of shape anisotropy in embedded low contrast submonolayer quantum dot structures;Applied Physics Letters;2015-12-21

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