Zn−Se−Temultilayers with submonolayer quantities of Te: Type-II quantum structures and isoelectronic centers-Reference-Cited by-同舟云学术

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Zn−Se−Temultilayers with submonolayer quantities of Te: Type-II quantum structures and isoelectronic centers

Published:2005-01-31 Issue:4 Volume:71 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Gu Y.,Kuskovsky Igor L.,van der Voort M.,Neumark G. F.,Zhou X.,Tamargo M. C.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.71.045340/fulltext

Reference25 articles.

1. Effect of disorder on the optical spectra of wide-gap II–VI semiconductor solid solutions

2. Optical properties ofδ-doped ZnSe:Te grown by molecular beam epitaxy: The role of tellurium

3. Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy

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