Affiliation:
1. Spectroscopy Laboratory for Functional π‐Electronic Systems and Department of Chemistry Yonsei University Seoul 03722 South Korea
2. Samsung Advanced Institute of Technology Samsung Electronics Suwon 16678 South Korea
3. CSE Team Samsung Electronics Hwaseong 18848 South Korea
Abstract
AbstractThe burgeoning demand for commercializing self‐luminescing quantum dot (QD) light‐emitting diodes (LEDs) has stimulated extensive research into environmentally friendly and efficient QD materials. Hydrofluoric acid (HF) additive improves photoluminescence (PL) properties of blue‐emitting ZnSeTe QDs, ultimately reaching a remarkable quantum yield (QY) of 97% with an ultranarrow peak width of 14 nm after sufficient HF addition. The improvement in optical properties of the QDs is accompanied by a morphology change of the particles, forming cubic‐shaped defect‐free ZnSeTe QDs characterized by a zinc blende (ZB) crystal structure. This treatment improves the QD‐emitting properties by facilitating facet‐specific growth, selectively exposing stabilized (100) facets, and reducing the lattice disorders. The facet‐specific growth process gives rise to defect‐free monodispersed cubic dots that exhibit remarkably narrow and homogeneous PL spectra. Meticulous time‐resolved spectroscopic studies allow an understanding of the correlation between ZnSeTe QDs’ particle shape and performance following HF addition. These investigations shed light on the intricacies of the growth mechanism and the factors influencing the PL efficiency of the resulting QDs. The findings significantly contribute to understanding the role of HF treatment in tailoring the optical properties of ZnSeTe QDs, thereby bringing it closer to the realization of highly efficient and bright QD‐LEDs for various practical applications.
Funder
National Research Foundation of Korea
Cited by
4 articles.
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