Carrier concentration enhancement of p-type ZnSe and ZnS by codoping with active nitrogen and tellurium by using a δ-doping technique
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118481
Reference12 articles.
1. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth
2. Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical Doping
3. Blue‐green laser diodes
4. Heavily dopedp‐ZnSe:N grown by molecular beam epitaxy
5. Doping of zinc‐selenide‐telluride
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