Defect-related photoluminescence from ammono GaN
Author:
Affiliation:
1. Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23220, USA
2. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, Warsaw 01-142, Poland
Funder
National Science Foundation
TEAM TECH program of the Foundation for Polish Science co-financed by the European Union under the European Development Fund
Polish National Science Center
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/am-pdf/10.1063/5.0045019
Reference42 articles.
1. Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives
2. Growth of bulk GaN crystals
3. Recent progress in basic ammonothermal GaN crystal growth
4. Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates
5. Vacancy defects in bulk ammonothermal GaN crystals
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