Principle of operation and carrier distributions of AlGaAs/GaAs in‐plane‐gated channels
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360641
Reference17 articles.
1. In‐plane‐gated quantum wire transistor fabricated with directly written focused ion beams
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3. Investigation of mesoscopic structures fabricated by channeled Si++ion implantation of deep heterostructures
4. Quantized resistance in in‐plane gated narrow constriction fabricated by wet etching
5. One‐dimensional lateral‐field‐effect transistor with trench gate‐channel insulation
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1. Gate bias controlled NDR in an in-plane-gate quantum dot transistor;Physica E: Low-dimensional Systems and Nanostructures;2006-05
2. Low‐Temperature Saturation of 2D Variable‐Range‐Hopping Conductivity Induced by the Gate Covering the Mesa Edge;physica status solidi (b);2002-03
3. Direct writing of active loads by focused ion beams;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-07
4. Nanodevices produced with focussed ion beams;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-04
5. Single-electron transistor fabricated by focused laser beam-induced doping of a GaAs/AlGaAs heterostructure;Applied Physics Letters;1997-04-21
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