Asymmetric tilt interface induced by 60° misfit dislocation arrays in GaSb/GaAs(001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112502
Reference11 articles.
1. Gallium arsenide and other compound semiconductors on silicon
2. On the microstructure and interfacial structure of InSb layers grown on GaAs(100) by molecular beam epitaxy
3. Lomer Dislocations in (0 0 1) GaSb/GaAs Heterostructure.
4. Structure of GaAs=GaSb incoherent interface after epitaxial growth
5. Accommodation of lattice mismatch and threading of dislocations in GaSb films grown at different temperatures on GaAs (001)
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