Structure of GaAs=GaSb incoherent interface after epitaxial growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107707
Reference12 articles.
1. Activation barriers to strain relaxation in lattice-mismatched epitaxy
2. On the microstructure and interfacial structure of InSb layers grown on GaAs(100) by molecular beam epitaxy
3. Dislocations d'interface et défauts de volume dans l'hétérostructure GaSb/GaAs
4. Equilibrium Structure of a Thin Epitaxial Film
5. Very Thin 2D GaAs Films on Si During the Early Stages of Growth by MBE
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