Material reaction and silicide formation at the refractory metal/silicon interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96829
Reference11 articles.
1. Microscopic properties and behavior of silicide interfaces
2. Chemical reaction and Schottky-barrier formation at V/Si interfaces
3. Chemical and structural aspects of reaction at the Ti/Si interface
4. Ti-Si mixing at room temperature: A high resolution ion backscattering study
5. Ion beam crystallography of metal-silicon interfaces: Pd-Si(111)
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3. Thermal stability of surface and interface structure of atomic layer deposited Al2O3 on H-terminated silicon;Journal of Applied Physics;2007-11
4. Effects of Sputtering Parameters on the Formation of Single-Oriented (002) Ti Film on Si;Japanese Journal of Applied Physics;2005-01-11
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