Carrier lifetimes in strained InGaAs/(Al)GaAs multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109060
Reference12 articles.
1. Large reflectivity modulation using InGaAs-GaAs
2. Bistable self‐electro‐optic operation of strained In0.1Ga0.9As/GaAs asymmetric Fabry–Perot modulators
3. Diffusion dynamics of holes in InxGa1−xAs/GaAs strained‐layer superlattices
4. Optical nonlinearities in strained‐layer InGaAs/GaAs multiple quantum wells
5. Band structure engineering of semiconductor lasers for optical communications
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1. Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells;Semiconductors;2018-01
2. Modeling of carrier lifetimes in uniaxially strained GaAs;Journal of Applied Physics;2012-05-15
3. off-State Current Limits of Narrow Bandgap MOSFETs;IEEE Transactions on Electron Devices;2006-11
4. Absorption Saturation Energy Density of InGaAs-InAlAs Multiple Quantum Well under Tensile and Compressive Strain;Japanese Journal of Applied Physics;2005-04-15
5. Carrier recombination in aligned InAs/GaAs quantum dots grown on strain‐relaxed InGaAs layers;physica status solidi (c);2003-06-18
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