Bistable self‐electro‐optic operation of strained In0.1Ga0.9As/GaAs asymmetric Fabry–Perot modulators
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106263
Reference7 articles.
1. Low-voltage multiple quantum well reflection modulator with on:off ratio > 100:1
2. InxGa1−xAs/GaAs multiple quantum well optical modulators for the 1.02–1.07 μm wavelength range
3. Low voltage strained layer asymmetric Fabry–Perot reflection modulator
4. Large reflectivity modulation using InGaAs-GaAs
5. The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulation
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Optoelectronic Devices;Handbook of Compound Semiconductors;1995
2. InGaAs/GaAs shallow quantum well optical switches grown by metalorganic vapor phase epitaxy;Applied Physics Letters;1994-06-06
3. Experimental and theoretical studies of a novel hetero-nipi reflection modulator;IEEE Journal of Quantum Electronics;1994-04
4. Very low saturation densities in strained InGaAs/AlGaAs multiple quantum wells;Applied Physics Letters;1994-02-21
5. Demonstration of All-Optical Bistability in a Strained Piezoelectric Self Electro-optic Effect Device;Integrated Photonics Research;1994
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