InGaAs/GaAs shallow quantum well optical switches grown by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111348
Reference14 articles.
1. QUANTUM WELL OPTOELECTRONIC SWITCHING DEVICES
2. Electroabsorption in an InGaAs/GaAs strained‐layer multiple quantum well structure
3. InxGa1−xAs/GaAs multiple quantum well optical modulators for the 1.02–1.07 μm wavelength range
4. Bistable self‐electro‐optic operation of strained In0.1Ga0.9As/GaAs asymmetric Fabry–Perot modulators
5. High-contrast/low-voltage normally on InGaAs/AlGaAs asymmetric Fabry-Perot modulator
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization of the Switching Parameters in the Dual-Channel Double Heterostructure Optoelectronic Switch;IEEE Transactions on Electron Devices;2004-07
2. Electroabsorption in extremely shallow quantum wells: Comparison between theory and experiment;Journal of Applied Physics;1999-05-15
3. Photonic Quantum Ring;Physical Review Letters;1999-01-18
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