Carrier recombination in aligned InAs/GaAs quantum dots grown on strain‐relaxed InGaAs layers-Reference-Cited by-同舟云学术

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Carrier recombination in aligned InAs/GaAs quantum dots grown on strain‐relaxed InGaAs layers

Published:2003-06-18 Issue:4 Volume: Page:1213-1216
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Siegert J.¹,Marcinkevicius S.¹,Gaarder A.¹,Leon R.²,Chaparro S.³,Johnson S. R.³,Sadofyev Y.³,Zhang Y. H.³

Affiliation:

1. Department of Microelectronics and Information Technology, Royal Institute of Technology, Electrum 229, 100 44 Kista, Sweden

2. Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA 91109, USA

3. Center for Solid State Electronics Research & Department of Electrical Engineering, Arizona State University, Tempe, Arizona, 85287‐6206, USA

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303046

Reference11 articles.

1. Nanoscale Structuring by Misfit Dislocations inSi1−xGex/SiEpitaxial Systems

2. Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties

3. Effect of lattice mismatch on surface morphology of InAs quantum dots on (100) In1−xAlxAs/InP

4. Room temperature carrier recombination in InGaAs/GaAs quantum wells

5. Dislocations and related traps in p‐InGaAs/GaAs lattice‐mismatched heterostructures

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Non-square-well potential profile and suppression of blinking in compositionally graded Cd1−xZnxSe/CdxZn1−xSe nanocrystals;Nanoscale;2010

2. Enhancement of Curie temperature in Ga1−xMnxAs epilayers grown on cross-hatched InyGa1−yAs buffer layers;Journal of Crystal Growth;2004-09

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