Effect of lattice mismatch on surface morphology of InAs quantum dots on (100) In1−xAlxAs/InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1428763
Reference13 articles.
1. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
2. Effect of strain on surface morphology in highly strained InGaAs films
3. InAs self‐assembled quantum dots on InP by molecular beam epitaxy
4. Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001)
5. Self-organized InAs quantum dots formation by As/P exchange reaction on (001) InP substrate
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