A low temperature functioning CoFeB/MgO-based perpendicular magnetic tunnel junction for cryogenic nonvolatile random access memory-Reference-Cited by-同舟云学术

A low temperature functioning CoFeB/MgO-based perpendicular magnetic tunnel junction for cryogenic nonvolatile random access memory

Published:2020-01-13 Issue:2 Volume:116 Page:022409
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lang Lili¹^ORCID,Jiang Yujie¹,Lu Fei¹,Wang Cailu¹,Chen Yizhang²^ORCID,Kent Andrew D.²,Ye Li¹^ORCID

Affiliation:

1. Center for Excellence in Superconducting Electronics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

2. Center for Quantum Phenomena, Department of Physics, New York University, New York, New York 10003, USA

Funder

Chinese Academy of Sciences

Division of Materials Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5129553

Reference30 articles.

1. Energy-Efficient Superconducting Computing—Power Budgets and Requirements

2. Sub-nanosecond switching in a cryogenic spin-torque spin-valve memory element with a dilute permalloy free layer

3. Nanosecond-Timescale Low Energy Switching of In-Plane Magnetic Tunnel Junctions through Dynamic Oersted-Field-Assisted Spin Hall Effect

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