Nanosecond-Timescale Low Energy Switching of In-Plane Magnetic Tunnel Junctions through Dynamic Oersted-Field-Assisted Spin Hall Effect
Author:
Affiliation:
1. Cornell University, Ithaca, New York 14853, United States
2. Kavli Institute at Cornell, Ithaca, New York 14853, United States
Funder
Army Research Office
Division of Electrical, Communications and Cyber Systems
Division of Materials Research
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b01443
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1. A new spin on magnetic memories
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