GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface
Author:
Affiliation:
1. Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
2. STR Group—Soft-Impact, Ltd., 64 Bolshoi Sampsonievskii Ave., Bld. “E,” 194044 St. Petersburg, Russia
Funder
Swiss National Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0040326
Reference28 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation
3. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
4. Growth and characterization of bulk InGaN films and quantum wells
5. Radiative recombination lifetime measurements of InGaN single quantum well
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