Radiative recombination lifetime measurements of InGaN single quantum well-Reference-Cited by-同舟云学术

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Radiative recombination lifetime measurements of InGaN single quantum well

Published:1996-09-23 Issue:13 Volume:69 Page:1936-1938
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sun C.‐K.,Keller S.,Wang G.,Minsky M. S.,Bowers J. E.,DenBaars S. P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.117627

Reference14 articles.

Cited by 75 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Evaluation of radiative and non-radiative recombination lifetimes in InGaN quantum wells with different ion-implantation damage;Japanese Journal of Applied Physics;2023-12-21

3. Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells: The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity;Nanomaterials;2023-10-24

4. Cubic InxGa1−xN/GaN quantum wells grown by Migration Enhanced Epitaxy (MEE) and conventional Molecular Beam Epitaxy (MBE);Journal of Alloys and Compounds;2022-11

5. Reduced Auger Coefficient through Efficient Carrier Capture and Improved Radiative Efficiency from the Broadband Optical Cavity: A Mechanism for Potential Droop Mitigation in InGaN/GaN LEDs;ACS Applied Materials & Interfaces;2022-03-09

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