Effect of thermal insulation on the electrical characteristics of NbOx threshold switches
Author:
Affiliation:
1. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
2. Hewlett Packard Labs, Palo Alto, California 94304, USA
Funder
NSF | ENG | Division of Electrical, Communications and Cyber Systems
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5015941
Reference29 articles.
1. Ultrathin (<10nm) Nb2O5/NbO2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications
2. Nanoscale (∼10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode
3. Room temperature fabricated NbOx/Nb2O5 memory switching device with threshold switching effect
4. Reduced Threshold Current in NbO2 Selector by Engineering Device Structure
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