Non-invasive in situ plasma monitoring of reactive gases using the floating harmonic method for inductively coupled plasma etching application
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4799972
Reference29 articles.
1. Etching rate characterization of SiO2 and Si using ion energy flux and atomic fluorine density in a CF4/O2/Ar electron cyclotron resonance plasma
2. Plasma etching of poly-Si/SiO2/Si structures: Langmuir-probe and optical-emission-spectroscopy monitoring
3. Smoothening mechanism for GaAs(100) surfaces during ion-enhanced plasma etching
4. Real-time control of ion density and ion energy in chlorine inductively coupled plasma etch processing
5. Feedback control of HfO2 etch processing in inductively coupled Cl2/N2/Ar plasmas
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1. Enhancing the Properties of Photocatalysts via Nonthermal Plasma Modification: Recent Advances, Treatment Variables, Mechanisms, and Perspectives;Industrial & Engineering Chemistry Research;2021-11-17
2. The radio-frequency fluctuation effect on the floating harmonic method;Physics of Plasmas;2016-08
3. The sheath effect on the floating harmonic method;Physics of Plasmas;2015-12
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