Electroluminescence, photoluminescence, and photocurrent studies of Si/SiGep‐i‐nheterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363129
Reference18 articles.
1. Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGexalloys
2. Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells
3. Excitonic photoluminescence from Si-capped strainedSi1−xGexlayers
4. Direct observation of band‐edge luminescence and alloy luminescence from ultrametastable silicon‐germanium alloy layers
5. Photoluminescence of confined excitons in MBE-grown Si1 − xGex/Si(100) single quantum wells
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