Determination of the local Al concentration in AlxGa1−xAs‐GaAs quantum well structures using the (200) diffraction intensity obtained with a 10 Å electron beam
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100695
Reference10 articles.
1. Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxy
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4. Auger depth profiling of Au–AlxGa1−xAs interfaces and LPE AlxGa1−xAs–GaAs heterojunctions
5. Raman scattering characterization of Ga1−xAlxAs/GaAs heterojunctions: Epilayer and interface
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2. X‐ray and particle diagnostics of a high‐density plasma by laser implosion (invited);Review of Scientific Instruments;1990-10
3. Inertial confinement;Nuclear Fusion;1990-09-01
4. Composition analysis of thin AlxGa1−xAs layers with TEM and SIMS;Journal of Materials Research;1990-03
5. Microanalysis on the (200) diffraction intensity to determine the Al concentrations for AlGaAs‐GaAs multiple‐quantum‐well structures;Journal of Applied Physics;1990-01-15
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