Auger depth profiling of Au–AlxGa1−xAs interfaces and LPE AlxGa1−xAs–GaAs heterojunctions
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Link
http://avs.scitation.org/doi/pdf/10.1116/1.569408
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Some aspects of the physics of man-made semiconductor heterosystems: superlattice electronic structure and related topics;Surface Science Reports;1993-11
2. Liquid Phase Epitaxy of AlGaInP on GaAs Substrate Using AlGaAs Buffer Layer;Crystal Research and Technology;1993
3. Oxygen‐induced Al surface segregation in AlxGa1−xAs and the effect of Y overlayers on the oxidation of the Y/AlxGa1−xAs interface;Journal of Applied Physics;1992-02-15
4. Liquid-phase epitaxial growth of InGaP for red electroluminescent devices;Solid-State Electronics;1991-08
5. Interface abruptness and LED performance of the AlGaAs/InGaP single heterostructure grown by liquid-phase epitaxy;Journal of Crystal Growth;1991-07
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