Microanalysis on the (200) diffraction intensity to determine the Al concentrations for AlGaAs‐GaAs multiple‐quantum‐well structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345774
Reference18 articles.
1. Ultrastructures for one- or two-dimensional confinement in compound semiconductors
2. Auger depth profiling of Au–AlxGa1−xAs interfaces and LPE AlxGa1−xAs–GaAs heterojunctions
3. Alloy Clustering inGa1−xAlxAsCompound Semiconductors Grown by Molecular Beam Epitaxy
4. Cathodoluminescence measurement of an orientation dependent aluminum concentration in AlxGa1−xAs epilayers grown by molecular beam epitaxy on a nonplanar substrate
5. Extrinsic layer at AlxGa1−xAs‐GaAs interfaces
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The effect of the static atomic displacements on the structure factors of weak reflections in cubic semiconductor alloys;Philosophical Magazine;2004-07-11
2. On the growth conditions of 3–5 μm well-doped AlGaAs/AlAs/GaAs infrared detectors and its relation to the photovoltaic effect studied by transmission electron microscopy;Infrared Physics & Technology;2003-10
3. Principles and applications of convergent beam electron diffraction: A bibliography (1938-1990);Journal of Electron Microscopy Technique;1991-01
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