Acceptor complex signatures in oxygen-rich ZnO thin films implanted with chlorine ions-Reference-Cited by-同舟云学术

Acceptor complex signatures in oxygen-rich ZnO thin films implanted with chlorine ions

Published:2020-09-28 Issue:12 Volume:128 Page:125701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Azarov Alexander¹^ORCID,Galeckas Augustinas¹^ORCID,Venkatachalapathy Vishnukanthan¹²^ORCID,Mei Zengxia³⁴,Du Xiaolong³⁴,Monakhov Eduard¹,Kuznetsov Andrej¹

Affiliation:

1. Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, PO Box 1048, Blindern, N-0316 Oslo, Norway

2. Department of Materials Science, National Research Nuclear University MEPhI, 31 Kashirskoe Hwy, 115409 Moscow, Russia

3. Institute of Physics, The Chinese Academy of Sciences, Beijing 100190, China

4. Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China

Funder

Research Council of Norway

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0021089

Reference48 articles.

1. ZnO nanostructures for optoelectronics: Material properties and device applications

2. A comprehensive review of ZnO materials and devices

3. Defect luminescence and its mediated physical properties in ZnO

4. Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation

5. Origin ofp-type doping difficulty in ZnO: The impurity perspective

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