Probing the SiGe virtual substrate by high-resolution channeling contrast microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1474597
Reference12 articles.
1. Silicon-Germanium Strained Layer Materials in Microelectronics
2. Strain compensated InGaAs-GaAsP-InGaP laser
3. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
4. High-mobility Si and Ge structures
5. On the nature of cross‐hatch patterns on compositionally graded Si1−xGexalloy layers
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1. On the mechanism of cross-hatch pattern formation in heterostructures with a small lattice mismatch;Applied Surface Science;2019-06
2. STRAIN RELAXATION IN SiGe VIRTUAL SUBSTRATE CHARACTERIZED BY HIGH RESOLUTION X-RAY DIFFRACTION;International Journal of Modern Physics B;2010-09-10
3. Strain modulation of SiGe virtual substrate;Applied Physics Letters;2006-04-17
4. Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition;Thin Solid Films;2006-03
5. Observation of local lattice tilts in strain-relaxed Si1-xGex using high resolution channeling contrast microscopy;Applied Physics A;2005-11
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