Suppression of defect propagation in semiconductors by pseudomorphic layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354472
Reference8 articles.
1. Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parameters
2. p‐channel, strained quantum well, field‐effect transistor
3. Band-structure engineering for low-threshold high-efficiency semiconductor lasers
4. Reduction of lasing threshold current density by the lowering of valence band effective mass
5. Theoretical gain in compressive and tensile strained InGaAs/InGaAsP quantum wells
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