A comparative analysis of the catastrophic degradation of AlGaAs/GaAs and AlGaAs/InGaAs laser diodes: role of the strained QWs-Reference-Cited by-同舟云学术

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A comparative analysis of the catastrophic degradation of AlGaAs/GaAs and AlGaAs/InGaAs laser diodes: role of the strained QWs

Published:2019-03-04 Issue: Volume: Page:
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Container-title:High-Power Diode Laser Technology XVII
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Author:

Souto Jorge,Pura José Luis,Torres Alfredo,Jimenéz Juan

Publisher

SPIE

Reference19 articles.

1. Laser diode reliability: crystal defects and degradation modes

2. Reliability and Degradation of Semiconductors Lasers and LEDs;Fukuda,1991

3. Time-resolved reconstruction of defect creation sequences in diode lasers

4. Catastrophic optical bulk damage in high power InGaAs-AlGaAs strained quantum well lasers;Sin;IEEE J. Sel. Topics Quant. Electr.,2017

5. Optical strength of semiconductor laser materials

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