Structural and optoelectronic properties of silicon germanium alloy thin films deposited by pulsed radio frequency plasma enhanced chemical vapor deposition-Reference-Cited by-同舟云学术

Structural and optoelectronic properties of silicon germanium alloy thin films deposited by pulsed radio frequency plasma enhanced chemical vapor deposition

Published:2008-09-15 Issue:6 Volume:104 Page:063709
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bhaduri A.,Chaudhuri P.,Williamson D. L.,Vignoli S.,Ray P. P.,Longeaud C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2981190

Reference27 articles.

1. Possible routes for cluster growth and particle formation in RF silane discharges

2. The physics and chemistry of dusty plasmas

3. Overview of growth and behaviour of clusters and particles in plasmas

4. Nanoparticle formation in low-pressure silane plasmas: bridging the gap between a-Si:H and μc-Si films

5. Effects of the substrate temperature on the growth and properties of hydrogenated nanostructured silicon thin films

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