TiN/Al Ohmic contacts to N-face n-type GaN for high-performance vertical light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3073887
Reference24 articles.
1. Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag
2. Performance enhancement of InGaN light-emitting diodes by laser lift-off and transfer from sapphire to copper substrate
3. Influence of crystal polarity on the properties of Pt/GaN Schottky diodes
4. Deep centers in a free-standing GaN layer
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3. Design of highly transparent ohmic contact to N face n-GaN for enhancing light extraction in GaN-based micro LED display;Optics Express;2023-11-27
4. Towards the understanding of the Ti/Al ratio role in solid-state reaction for ohmic contacts on n-GaN;Materials Science in Semiconductor Processing;2023-05
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