Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3624621
Reference18 articles.
1. Infrared Detectors for the Future
2. Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature
3. InAsSbP quantum dots grown by liquid phase epitaxy
4. Interaction and Cooperative Nucleation of InAsSbP Quantum Dots and Pits on InAs(100) Substrate
5. Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface
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1. Nano-Scale Architecture of Quantum-Size Structures at the Growth from Quaternary In–As–Sb–P Liquid Phase on InAs(100) Substrate;Journal of Contemporary Physics (Armenian Academy of Sciences);2022-05-27
2. Нано-архитектура кванторазмерных структур при выращивании из четырехкомпонентной In–As–Sb–P жидкой фазы на подложке InAs(100);Proceedings of NAS RA. Physics;2022-05-16
3. Geometric Features and Numerical Analysis of InAsSbP Composition Micro- and Nanostructures Shape Transformation at Nucleation from Liquid Phase;Journal of Contemporary Physics (Armenian Academy of Sciences);2021-04
4. Nucleation Chronology and Electronic Properties of InAs1–x–ySbxPy Graded Composition Quantum Dots Grown on an InAs(100) Substrate;ACS Applied Electronic Materials;2020-03-05
5. Narrow bandgap mid-infrared photodetectors based on InAsSbP quantum dots;Journal of Contemporary Physics (Armenian Academy of Sciences);2017-01
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