Nucleation Chronology and Electronic Properties of InAs1–x–ySbxPy Graded Composition Quantum Dots Grown on an InAs(100) Substrate-Reference-Cited by-同舟云学术

Nucleation Chronology and Electronic Properties of InAs1–x–ySbxPy Graded Composition Quantum Dots Grown on an InAs(100) Substrate

Published:2020-03-05 Issue:3 Volume:2 Page:646-650
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Gambaryan Karen M.¹,Boeck Torsten²,Trampert Achim³^ORCID,Marquardt Oliver⁴^ORCID

Affiliation:

1. Department of Physics of Semiconductors and Microelectronics, Yerevan State University, 1 A. Manoukian Str., Yerevan 0025, Armenia

2. Institut für Kristallzüchtung, Leibniz-Institut im Forschungsverbund Berlin e.V., Max-Born-Str. 2, 12489 Berlin, Germany

3. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5−7, 10117 Berlin, Germany

4. Weierstraß-Institut für Angewandte Analysis und Stochastik, Leibniz-Institut im Forschungsverbund Berlin e.V., Mohrenstraße 39, 10117 Berlin, Germany

Funder

Deutscher Akademischer Austauschdienst

Deutsche Forschungsgemeinschaft

Science Committee of RA

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00739

Reference25 articles.

1. Intersublevel Infrared Photodetector with Strain-Free GaAs Quantum Dot Pairs Grown by High-Temperature Droplet Epitaxy

2. Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature

3. Zur Theorie der orientierten Ausscheidung von Ionenkristallen aufeinander

4. Nucleation features and energy levels of type-II InAsSbP quantum dots grown on InAs(100) substrate

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