Effect of nitrogen-accommodation ability of electrodes in SiNx-based resistive switching devices-Reference-Cited by-同舟云学术

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Effect of nitrogen-accommodation ability of electrodes in SiNx-based resistive switching devices

Published:2017-12-04 Issue:23 Volume:111 Page:233510
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yang Mei¹,Wang Hong¹,Ma Xiaohua¹,Gao Haixia²,Wang Bin¹³

Affiliation:

1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China

2. School of Microelectronics, Xidian University, Xi'an 710071, China

3. Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Funder

Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4996618

Reference34 articles.

1. Future challenges of flash memory technologies

2. Metal–Oxide RRAM

3. Nanoionics-based resistive switching memories

4. Resistive switching in transition metal oxides

5. Thermochemical resistive switching: materials, mechanisms, and scaling projections

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