Formation and thermal stability of ultra-shallow p+ junctions in Si and Si1−x Gex formed by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1518766
Reference20 articles.
1. Characterization of low-energy (100 eV–10 keV) boron ion implantation
2. Process effects in shallow junction formation by plasma doping
3. Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions
4. Boron-enhanced diffusion of boron: Physical mechanisms
5. Elemental boron doping behavior in silicon molecular beam epitaxy
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Formation of p[sup +] shallow junctions using SiGe barriers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
2. The Use of SiGe Barriers During the Formation of p+ Shallow Junctions by Ion Implantation;MRS Proceedings;2004
3. Using point-defect engineering to increase stability of highly doped ultrashallow junctions formed by molecular-beam-epitaxy growth;Applied Physics Letters;2003-10-06
4. {311} Defect evolution in Si-implanted Si1−xGex alloys;Materials Science in Semiconductor Processing;2003-08
5. Magnetic recording: advancing into the future;Journal of Physics D: Applied Physics;2002-09-13
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