Boron-enhanced diffusion of boron: Physical mechanisms
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123841
Reference11 articles.
1. The interstitial fraction of diffusivity of common dopants in Si
2. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
3. Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials
4. Damage, defects and diffusion from ultra-low energy (0–5 keV) ion implantation of silicon
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